| Автор | V De Renzi |
| Автор | Maria Grazia Betti |
| Автор | Carlo Mariani |
| Автор | J Almeida |
| Автор | M Grioni |
| Дата выпуска | 2000-09-04 |
| dc.description | The ordered (1×2) monolayer of Bi on the InAs(110) surface is studied by means of angle-resolved high-resolution ultra-violet photoemission at room temperature. Four bands of Bi-induced surface states are singled out and their dispersion is mapped along the high-symmetry directions of the surface Brillouin zone. The highest occupied state S<sup>I</sup> lies inside the InAs(110) energy gap at 0.2 eV binding energy and spreads across the Fermi level, determining the semimetallic character of the system. The second-highest occupied state S<sup>II</sup> is located at 0.83 eV binding energy (at ), while states S<sup>III</sup> and S<sup>IV</sup> are located near the internal gap edge at 2.57 eV and 3.3 eV binding energy, and present band dispersions along of ~340 meV and 300 meV, respectively. The Bi-induced bands of the (1×2) phase are shifted in energy relative to the corresponding bands of the (1×1)-Bi/InAs(110) phase and their width is reduced. These differences are discussed in the light of the geometric structure of the two phases. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Occupied surface-state bands of the (1×2) ordered phase of Bi/InAs(110) |
| Тип | paper |
| DOI | 10.1088/0953-8984/12/35/307 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 12 |
| Первая страница | 7721 |
| Последняя страница | 7726 |
| Выпуск | 35 |
