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Автор Shu-Ping Li
Автор Ren-Zhi Wang
Автор Yong-Mei Zheng
Автор Shu-Hui Cai
Автор Guo-Min He
Дата выпуска 2000-09-04
dc.description We have extended the average-bond-energy method to study the strained-heterojunction band offset. Through a detailed study of the effect of hydrostatic and uniaxial strains on the energy of the average valence band edge E<sub>v.av</sub> relative to the average bond energy, we find that E<sub>v.av</sub> remains basically unchanged under different strain conditions, and that the deformation potential a<sub>v.av</sub> corresponding to E<sub>v.av</sub> is much smaller than the a<sub>v</sub> for other analogous methods. Thus, in the average-bond-energy method, the valence band offset ΔE<sub>v</sub> can be obtained neglecting a<sub>v.av</sub>. It is only necessary to calculate the valence band maximum energy relative to the average bond energy before the strain and to use the experimental values of the deformation potential b and spin-orbit splitting Δ<sub>0</sub> to determine the splitting value for the valence band. It is not necessary to calculate the band structures under various strain conditions. This simplified calculation method involves only a small calculational burden; therefore, it can conveniently be used to predict the strained-heterojunction band offset.
Формат application.pdf
Издатель Institute of Physics Publishing
Название An average-bond-energy method used for band-offset calculation for a strained heterojunction
Тип paper
DOI 10.1088/0953-8984/12/35/311
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 12
Первая страница 7759
Последняя страница 7770
Выпуск 35

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