Energy spectra of narrow- and zero-gap-semiconductor quantum dots
F M Gashimzade; A M Babaev; M A Bagirov; F M Gashimzade; Institute of Physics, Azerbaijan Academy of Sciences, H Cavid Avenue, 33, 370143, Baku, Azerbaijan; A M Babaev; Institute of Physics, Azerbaijan Academy of Sciences, H Cavid Avenue, 33, 370143, Baku, Azerbaijan; M A Bagirov; Institute of Physics, Azerbaijan Academy of Sciences, H Cavid Avenue, 33, 370143, Baku, Azerbaijan
Журнал:
Journal of Physics: Condensed Matter
Дата:
2000-09-11
Аннотация:
The size dependence of the spectra of free carriers in A<sup>3</sup>B<sup>5</sup>- and A<sup>2</sup>B<sup>6</sup>-type-semiconductor spherical quantum dots is studied. The advantage of a universal method for obtaining equations that are invariant under the transformations of the rotations group, which directly yields a system of equations for the radial functions for any number of bands considered, is demonstrated. The calculated energy eigenstates of the spherical InAs quantum dot and quantum dots based on zero- and narrow-gap semiconductors of the HgTe and Cd<sub>1-x</sub>Hg<sub>x</sub>Te (x<0.16) types are presented.
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