| Автор | Paul D Brown |
| Дата выпуска | 2000-12-11 |
| dc.description | Site-specific focused ion beam milling procedures are used to prepare cross-sectional TEM sample foils through a range of epitaxial GaN thin films. The high threading defect densities associated with heteroepitaxial GaN/sapphire prohibit the unambiguous identification of hillock nucleation events. Inversion domains are, however, identified at the core of hillocks formed on CVD grown GaN on N-polar bulk GaN substrates. It is considered that remnant contamination from the KOH chemomechanical polishing procedure is responsible for the inversion domain nucleation. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A transmission electron microscopy investigation of buried defect sources within epitaxial GaN |
| Тип | paper |
| DOI | 10.1088/0953-8984/12/49/319 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 12 |
| Первая страница | 10195 |
| Последняя страница | 10203 |
| Аффилиация | Paul D Brown; School of Mechanical, Materials, Manufacturing, Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, UK |
| Выпуск | 49 |
