| Автор | T M Schmidt |
| Автор | J F Justo |
| Автор | A Fazzio |
| Дата выпуска | 2000-12-11 |
| dc.description | We performed a theoretical investigation on the effects of extended defects on the structural and electronic properties of dopant atoms in gallium arsenide. We observed that silicon impurities segregate at GaAs stacking faults. A Si atom at a Ga site in a stacking fault in either a neutral or a negatively charged state is energetically favourable as compared to a Si atom at a Ga site in a crystalline environment by as much as 0.2 eV. Additionally, a substitutional Si impurity in the negative charge state in a stacking fault has a distinct structure as compared to the same impurity in a crystal. The results suggest that the stacking fault may prevent the formation of metastable defects, such as DX centres. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The effect of a stacking fault on the electronic properties of dopants in gallium arsenide |
| Тип | paper |
| DOI | 10.1088/0953-8984/12/49/323 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 12 |
| Первая страница | 10235 |
| Последняя страница | 10239 |
| Выпуск | 49 |
