An integral equation approach to an sp<sup>3</sup>d<sup>5</sup> liquid: electronic structure of liquid silicon
Monika S K Fuchs; Monika S K Fuchs; Institute of Technical Physics, DLR Stuttgart, Pfaffenwaldring 38-40, 70569 Stuttgart, Germany
Журнал:
Journal of Physics: Condensed Matter
Дата:
2000-02-28
Аннотация:
In order to combine the advantages of tight-binding integral equation methods with basis sets not restricted to the lowest two orbital quantum numbers we extend the molecular fluid approach for the sp<sup>3</sup> model of Lomba et al to arbitrarily high orbital quantum numbers. As an example, we present a single-superchain/effective-medium calculation of the electronic density of states for liquid silicon within a tight-binding approximation that includes, besides the 3s and 3p orbitals, also the 3d orbitals. Comparison with results from the sp<sup>3</sup> model and different molecular dynamics results shows that within this sp<sup>3</sup> d<sup>5</sup> model very good agreement with plane-wave calculations is found whereas the sp<sup>3</sup> model leads to unsatisfactory results.
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