Annealing of vacancy-type defects and crystallisation of icosahedral Al-Mn-Si
R Chidambaram; M K Sanyal; P M G Nambissan; P Sen; R Chidambaram; Physics Group, Bhabha Atomic Res. Centre, Bombay, India; M K Sanyal; Physics Group, Bhabha Atomic Res. Centre, Bombay, India; P M G Nambissan; Physics Group, Bhabha Atomic Res. Centre, Bombay, India; P Sen; Physics Group, Bhabha Atomic Res. Centre, Bombay, India
Журнал:
Journal of Physics: Condensed Matter
Дата:
1990-01-08
Аннотация:
The authors report a positron annihilation investigation of quasicrystalline-to-crystalline phase transition in the Al-Mn-Si alloy system using both Doppler broadening and lifetime measurement techniques. The results show the presence of small vacancy clusters in the as-grown icosahedral phase. Isochronal annealing studies carried out from 100 degrees C onwards show that the vacancy clusters are annealed out along with the crystallisation process. The positron lifetime results rule out the possibility of a central hole which had been postulated in the icosahedral building block called the Mackay icosahedron.
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