| Автор | H White |
| Автор | D S McLachlan |
| Дата выпуска | 1990-04-16 |
| dc.description | The effect of varying the carrier concentration and type (electrons and holes, or holes only) on weak-antilocalisation parameters such as the inelastic scattering length is studied. Disordered bismuth-based films are used, and the carrier concentration and type are changed by doping with tin. Two methods of doping are utilised. In the first, the films are sputtered from alloyed bismuth-tin targets. The second method involved interleaving bismuth layers 4.0 nm thick with tin layers less than a monolayer thick. It is shown that the sign of the temperature coefficient of resistance results from the delicate interplay between the weak antilocalisation and associated electron-electron interaction channels. It is also shown that the inelastic scattering length is only weakly dependent on carrier concentration but strongly dependent on film thickness. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The carrier concentration dependence of weak-localisation parameters in bismuth-based systems |
| Тип | paper |
| DOI | 10.1088/0953-8984/2/15/009 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 2 |
| Первая страница | 3529 |
| Последняя страница | 3538 |
| Аффилиация | H White; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa |
| Аффилиация | D S McLachlan; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa |
| Выпуск | 15 |
