Simulation of the surface temperature profile of a heated slab-shaped sample in the Casimir conduction regime
A G Every; N P Hewett; L J Challis; J Cooper; A G Every; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa; N P Hewett; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa; L J Challis; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa; J Cooper; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa
Журнал:
Journal of Physics: Condensed Matter
Дата:
1990-04-16
Аннотация:
The integral equation approach of Klitsner and co-workers (1987,1988) for boundary limited thermal conductance is adapted for calculating the surface temperature profile of wide slab-shaped samples in which the temperature is independent of the large dimension transverse to the direction of heat flow. It is used to model the surface temperature of a silicon wafer in which a hot 2DEG is embedded. Noteworthy features emerging from this simulation are temperature discontinuities at the edges of the heat source and sink with the temperature gradient nearby being non-uniform, marked differences between the temperature profiles of the opposite faces, and the existence of a finite thermal gradient in regions where there is no net heat flux.
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