| Автор | I P Roche |
| Автор | G P Whittington |
| Автор | P C Main |
| Автор | L Eaves |
| Автор | F W Sheard |
| Автор | G Wunner |
| Автор | K E Singer |
| Дата выпуска | 1990-05-14 |
| dc.description | The authors have studied the electrical conductivity of n<sup>+</sup>-n<sup>-</sup>-n<sup>+</sup> GaAs structures in which the thickness of the n<sup>-</sup> layer is comparable with the mean donor separation. At low temperatures, electrical conduction is dominated by a process in which electrons tunnel across the sample via shallow donor impurities close to the centre of the n<sup>-</sup> layer. By studying the magnetoresistance of such samples they have investigated the effect of a magnetic field on the donor wavefunction in GaAs. Measurements are compared with the approximate analytical expression for the donor wavefunction and with numerical solutions of the ground-state hydrogenic wavefunctions in megatesla fields developed by astrophysicists. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Impurity-assisted tunnelling as a probe of the donor wavefunction in n-GaAs |
| Тип | paper |
| DOI | 10.1088/0953-8984/2/19/011 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 2 |
| Первая страница | 4439 |
| Последняя страница | 4435 |
| Аффилиация | I P Roche; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | G P Whittington; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | P C Main; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | L Eaves; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | F W Sheard; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | G Wunner; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | K E Singer; Dept. of Phys., Nottingham Univ., UK |
| Выпуск | 19 |
