| Автор | F Tremblay |
| Автор | M Pepper |
| Автор | R Newbury |
| Автор | D A Ritchie |
| Автор | D C Peacock |
| Автор | J E F Frost |
| Автор | G A C Jones |
| Автор | G Hill |
| Дата выпуска | 1990-09-03 |
| dc.description | A gated low-mobility GaAs-Al<sub>0.3</sub>Ga<sub>0.7</sub>As delta-doped heterojunction of large area is used to demonstrate a transition from diffusive to hopping transport as the electron concentration in the two-dimensional conducting layer is reduced. At helium temperatures (1.3<T<4.2 K), the hopping conductivity is well described by the variable-range-hopping law sigma approximately sigma <sub>0</sub> exp-(T<sub>0</sub>/T)<sup>1/2</sup> expected when electron-electron interactions are strong. At very low temperatures (T approximately=100 mK), conductance fluctuations are seen, indicating that under these conditions size effects are important and a description of transport by a macroscopic model of conduction is inappropriate. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Hopping in a low-mobility GaAs-AlGaAs heterojunction in the limit of low electronic concentrations |
| Тип | lett |
| DOI | 10.1088/0953-8984/2/35/013 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 2 |
| Первая страница | 7367 |
| Последняя страница | 7371 |
| Аффилиация | F Tremblay; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | M Pepper; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | R Newbury; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | D A Ritchie; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | D C Peacock; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | J E F Frost; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | G A C Jones; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | G Hill; Cavendish Lab., Cambridge Univ., UK |
| Выпуск | 35 |
