New results for the normal Hall coefficient R₀, the resistivity and the room-temperature coefficient of resistivity of five Ni-Bi-Si and six Ni-P amorphous (melt-quenched) alloys are reported. From these results, and results already reported, the authors have obtained rather detailed information on the variation in the conduction electron density with the metalloid concentration c_m in the amorphous Ni-B-Si alloys. The results for the alloys with low c_m extrapolate to those of liquid Ni, whereas the variation in the Fermi wavevector (deduced from R₀) with c_m supports the applicability of the Ziman-Faber theory for the explanation of the transport properties of these alloys. The contribution of the metalloid atoms to the conduction band is found to change at c_m approximately=0.3, which is probably related to filling of the d band. This change occurs in the range of c_m in which a significant change in the chemical short-range order has been observed. Although less detailed, the results for the Ni-P alloys follow the same trend as those for Ni-B-Si alloys and do not indicate any dramatic change in R₀ at around c_m approximately=0.24 as reported for electrodeposited Ni-P alloys.