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Автор F Maury
Автор A Lucasson
Автор P Lucasson
Автор P Moser
Автор F Faudot
Дата выпуска 1990-11-26
dc.description Three series of dilute iron alloys, with oversized solutes, FeTi, FeV and FeMo, in the concentration range 50 at.ppm to 3 at.%, have been electron-irradiated at low temperature together with the metal. A strong dependence of the solute and defect resistivities on the solute concentration is observed, which is analysed in terms of the two-current model. The specimens have then been annealed throughout stage I (self-interstitial migration) and stage II up to stage III (vacancy migration), with their resistivity measured. In these alloys, the mobile Fe self-interstitials, which are not annihilated at vacancies, are observed to get trapped at solute atoms in stage I and released from traps in stage II. Detrapping occurs in stage I at a temperature, T<sub>II</sub>, depending on the solute. Trapping is the weakest for V (T<sub>II</sub> approximately=140 K) and the strongest for Ti (T<sub>II</sub> approximately=180 K). At very low concentration (50 and 100 at.ppm), the solute trapping efficiency is lost at the beginning of stage III (200 K) for all these solutes. In the most concentrated FeMo alloys, an important fraction of the radiation-induced resistivity is retained at 200 K, due to multiple trapping (trapping of iron interstitials by more than one Mo atom).
Формат application.pdf
Издатель Institute of Physics Publishing
Название Interstitial migration in irradiated iron and iron-based dilute alloys. I. Interstitial trapping and detrapping in FeMo, FeV and FeTi dilute alloys
Тип paper
DOI 10.1088/0953-8984/2/47/004
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 2
Первая страница 9269
Последняя страница 9290
Аффилиация F Maury; UA CNRS, Paris XI Univ., Orsay, France
Аффилиация A Lucasson; UA CNRS, Paris XI Univ., Orsay, France
Аффилиация P Lucasson; UA CNRS, Paris XI Univ., Orsay, France
Аффилиация P Moser; UA CNRS, Paris XI Univ., Orsay, France
Аффилиация F Faudot; UA CNRS, Paris XI Univ., Orsay, France
Выпуск 47

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