Ultraviolet laser excited luminescence of Ti-sapphire
L E Bausa; I Vergara; F Jaque; J Garcia Sole; L E Bausa; Dept. de Fisica Aplicada C-IV, Univ. Autonoma de Madrid, Spain; I Vergara; Dept. de Fisica Aplicada C-IV, Univ. Autonoma de Madrid, Spain; F Jaque; Dept. de Fisica Aplicada C-IV, Univ. Autonoma de Madrid, Spain; J Garcia Sole; Dept. de Fisica Aplicada C-IV, Univ. Autonoma de Madrid, Spain
Журнал:
Journal of Physics: Condensed Matter
Дата:
1990-12-10
Аннотация:
The photoluminescence of Ti-doped sapphire (Ti:Al<sub>2</sub>O<sub>3</sub>) crystals excited using the second (532 nm) and fourth (266 nm) harmonics of a high power pulsed Nd:YAG laser has been investigated. Excitation at 532 nm into the crystal field band of Ti<sup>3+</sup> produces the well known broad infrared emission band corresponding to the e<sub>g</sub> to t<sub>2g</sub> transition in the octahedral field approximation. However, this emission can also be excited with ultraviolet light together with an additional blue emission via a two-photon excitation process. This has two lifetime components of 600 and 21 mu s. The mechanism of excitation for the infrared emission band when it is excited via ultraviolet radiation has been studied: it is shown that the excited state of the Ti<sup>3+</sup> ions is populated via an intermediate state (labelled as X) which clearly correlates with the shortest lifetime component of the blue emission.
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