Quantum conductivity corrections in free-standing and supported n<sup>+</sup>-GaAs wires
A Potts; D G Hasko; J R A Cleaver; C G Smith; H Ahmed; M J Kelly; J E F Frost; G A C Jones; D C Peacock; D A Ritchie; A Potts; Cavendish Lab., Cambridge Univ., UK; D G Hasko; Cavendish Lab., Cambridge Univ., UK; J R A Cleaver; Cavendish Lab., Cambridge Univ., UK; C G Smith; Cavendish Lab., Cambridge Univ., UK; H Ahmed; Cavendish Lab., Cambridge Univ., UK; M J Kelly; Cavendish Lab., Cambridge Univ., UK; J E F Frost; Cavendish Lab., Cambridge Univ., UK; G A C Jones; Cavendish Lab., Cambridge Univ., UK; D C Peacock; Cavendish Lab., Cambridge Univ., UK; D A Ritchie; Cavendish Lab., Cambridge Univ., UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1990-02-19
Аннотация:
Low-temperature electrical and magnetoresistance measurements have been performed on free-standing and supported wires of n-type GaAs doped to 10<sup>17</sup> cm<sup>-3</sup> over the temperature range 0.47-4.2 K. These wires were triangular in cross-section, with widths of 600-900 nm and lengths of 3.2-10 mu m. The authors report that the observed increase in the resistance for temperatures below 4.2 K can be interpreted as being due to a combination of weak localisation of 3D electron-electron interaction effects. They also show how the results described here can be used as the basis for a determination of the phonon conductivity and dimensionality in free-standing structures.
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