Results are presented for the temperature and magnetic field dependence of the resistivity of a number of Nb_1-xSi_x amorphous alloys in the variable-range hopping regime (x=0.89, 0.90, 0.91). The magnetoresistance is negative and proportional to B in low magnetic fields. Analysis of the magnetoresistance presented is based upon theories of the recent model of an 'oriented path' mechanism.