| Автор | R L Hota |
| Автор | G S Tripathi |
| Дата выпуска | 1991-08-19 |
| dc.description | The effective g-factor, obtained from the spin contribution to the Knight shift, is calculated from first principles for ternary semiconductors and applied to Pb<sub>1-x</sub>Sn<sub>x</sub>Te. A six-level k. pi theory, within the framework of the effective-mass representation, is used to calculate the effective g-factor as a function of carrier density, tin concentration and temperature. The temperature and concentration dependence of the energy gap is used via the virtual-crystal approximation. The agreement with the available experiments is good, and the trends and results obtained are in overall conformity with that found in the experiments. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Theory of effective g-factors in ternary semiconductors: application to Pb<sub>1-x</sub>Sn<sub>x</sub>Te |
| Тип | paper |
| DOI | 10.1088/0953-8984/3/33/009 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 3 |
| Первая страница | 6299 |
| Последняя страница | 6311 |
| Аффилиация | R L Hota; Dept. of Phys., Berhampur Univ., Orissa, India |
| Аффилиация | G S Tripathi; Dept. of Phys., Berhampur Univ., Orissa, India |
| Выпуск | 33 |
