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Автор A V Nikolaeva
Автор A V Artemyev
Автор Yu H Vekilov
Автор L K Fionova
Автор M B Samsonova
Дата выпуска 1992-03-16
dc.description The electronic structure of the Sigma 5(210) grain boundary in silicon was calculated by the first-principles, self-consistent, linear muffin-tin orbitals/tight-binding representation method on the basis of the atomic structure simulated by the bond orbital model. The calculated electronic structure is found to have localized and resonant defect states, which are caused by the distortions of the atomic structure at the grain boundary. Sharply localized states in the pseudo-gap were observed along with splitting of s states and dissipation of s-p mixed states. A rehybridization effect was revealed at the grain boundary on the atoms with strongly distorted bonds. However, there are no states inside the band gap. The increase of the s-state occupancy in comparison with the p-state occupancy appeared on the atoms with strongly distorted bonds at the grain boundary. The relationship between local electronic structure and local arrangement of the atoms is discussed.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Investigation of the electronic structure of the Sigma 5(210) grain boundary in silicon by the linear muffin-tin orbitals/tight-binding method
Тип paper
DOI 10.1088/0953-8984/4/11/007
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 4
Первая страница 2775
Последняя страница 2791
Аффилиация A V Nikolaeva; Inst. of Nucl. Safety, Acad. of Sci., Moscow, Russia
Аффилиация A V Artemyev; Inst. of Nucl. Safety, Acad. of Sci., Moscow, Russia
Аффилиация Yu H Vekilov; Inst. of Nucl. Safety, Acad. of Sci., Moscow, Russia
Аффилиация L K Fionova; Inst. of Nucl. Safety, Acad. of Sci., Moscow, Russia
Аффилиация M B Samsonova; Inst. of Nucl. Safety, Acad. of Sci., Moscow, Russia
Выпуск 11

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