Low-temperature far-infrared study of localized states in In-doped Pb<sub>0.75</sub>Sn<sub>0.25</sub>Te single crystals
N Romcevic; Z V Popovic; D R Khokhlov; N Romcevic; Inst. of Phys., Belgrade, Yugoslavia; Z V Popovic; Inst. of Phys., Belgrade, Yugoslavia; D R Khokhlov; Inst. of Phys., Belgrade, Yugoslavia
Журнал:
Journal of Physics: Condensed Matter
Дата:
1992-04-27
Аннотация:
The authors present low-temperature far-infrared reflection spectra of In-doped Pb<sub>0.75</sub>Sn<sub>0.25</sub>Te single crystals at various doping concentrations. These spectra at temperatures below 20 K are fitted using a modified plasmon-phonon interaction model with an additional oscillator, which describes the electron transition from two- to one-electron states at the In impurity level. The In-doped Pb<sub>0.75</sub>Sn<sub>0.25</sub>Te impurity-state energy structure is explained.
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