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Автор C Y Chen
Автор P W Jin
Автор S Q Zhang
Дата выпуска 1992-05-04
dc.description The method of a variational wavefunction has been used to study the effect of the electron-LO-phonon interaction on the binding energy of the ground bound state of an isolated hydrogenic impurity in a GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum well subjected to an external electric field. The binding energy is obtained as a function of the impurity position z<sub>i</sub>, the well width L and the electric field strength F. It was found that the polaronic correction to the impurity binding energy is quite significant. The correction ranges from about 8% when the impurity is placed at the centre to 13-15% when the impurity is placed at the boundary for the thin quantum well.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Binding energy of the bound polaron in a quantum well within an electric field
Тип paper
DOI 10.1088/0953-8984/4/18/014
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 4
Первая страница 4483
Последняя страница 4489
Аффилиация C Y Chen; Dept. of Phys., Guangzhou Teacher's Coll., China
Аффилиация P W Jin; Dept. of Phys., Guangzhou Teacher's Coll., China
Аффилиация S Q Zhang; Dept. of Phys., Guangzhou Teacher's Coll., China
Выпуск 18

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