Автор |
L Magaud |
Автор |
J P Julien |
Автор |
F Cyrot-Lackmann |
Дата выпуска |
1992-06-15 |
dc.description |
Ab initio calculations of the electronic structure of yttrium disilicide have been performed using the LMTO-ASA method (linear muffin-tin orbitals in the atomic sphere approximation). Two different cases have been investigated: stoichiometric YSi<sub>2</sub> and silicon-deficient YSi<sub>1.7</sub> where one silicon atom out of every six is missing. The authors show that the main effect of these vacancies is to shift the Fermi level towards a region of much lower density, thus stabilizing the structure. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
The effect of silicon vacancies on the electron structure of yttrium disilicide |
Тип |
paper |
DOI |
10.1088/0953-8984/4/24/009 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
4 |
Первая страница |
5399 |
Последняя страница |
5404 |
Аффилиация |
L Magaud; Lab. d'Etudes des Proprietes Electron. des Solides, CNRS, Grenoble, France |
Аффилиация |
J P Julien; Lab. d'Etudes des Proprietes Electron. des Solides, CNRS, Grenoble, France |
Аффилиация |
F Cyrot-Lackmann; Lab. d'Etudes des Proprietes Electron. des Solides, CNRS, Grenoble, France |
Выпуск |
24 |