Автор |
H Ofner |
Автор |
F P Netzer |
Автор |
J A D Matthew |
Дата выпуска |
1992-12-07 |
dc.description |
The interfacial reactivity of the rare earth metals Yb and Pr deposited on ultra-thin layers of SiO<sub>2</sub> on Si(111) substrates under UHV conditions is investigated using the Auger spectra of silicon, oxygen and the rare earth metals to monitor chemical changes. At room temperature exposure to approximately 10 AA of rare earth metal leads to reduction of the SiO<sub>2</sub> to form rare earth oxide and rare earth silicide, while at elevated temperature reaction to form a silicate phase is demonstrated. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Rare earth metal-SiO<sub>2</sub>-Si interfaces monitored by Auger spectroscopy |
Тип |
paper |
DOI |
10.1088/0953-8984/4/49/007 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
4 |
Первая страница |
9795 |
Последняя страница |
9802 |
Аффилиация |
H Ofner; Inst. fur Experimentalphysik, Karl-Franzens Univ. Graz, Austria |
Аффилиация |
F P Netzer; Inst. fur Experimentalphysik, Karl-Franzens Univ. Graz, Austria |
Аффилиация |
J A D Matthew; Inst. fur Experimentalphysik, Karl-Franzens Univ. Graz, Austria |
Выпуск |
49 |