| Автор | G A Niklasson |
| Автор | T M J Nilsson |
| Дата выпуска | 1992-12-14 |
| dc.description | Relaxation peaks with the same activation energy as the DC conductivity have been observed in the low-frequency dielectric properties of insulator thin films. In particular, the authors present results for electron-beam-evaporated aluminium oxide films and sputtered hydrated nickel oxide films. The presence of the relaxation peaks seems to be correlated to the amount of hydrogen atoms present in the films. They propose a phenomenological model for the relaxation process. It is assumed that the DC conductivity is due to charge-carrier transport in electronic states positioned at a certain energy above the Fermi level. The energy difference between the Fermi level and the transport states is equal to the activation energy. Empty localized states close to the Fermi level will act as traps and give rise to a relaxation peak in the imaginary part of the dielectric permittivity. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Relaxation processes in insulator thin films |
| Тип | paper |
| DOI | 10.1088/0953-8984/4/50/036 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 4 |
| Первая страница | 10479 |
| Последняя страница | 10486 |
| Аффилиация | G A Niklasson; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden |
| Аффилиация | T M J Nilsson; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden |
| Выпуск | 50 |
