| Автор | V S Veerasamy |
| Автор | G A J Amaratunga |
| Автор | C A Davis |
| Автор | A E Timbs |
| Автор | W I Milne |
| Автор | D R McKenzie |
| Дата выпуска | 1993-03-29 |
| dc.description | The ability to control the electrical resistivity of semiconducting tetrahedral amorphous carbon (ta-C) films is reported. Phosphorus is incorporated during film growth from a plasma formed with a cathodic vacuum arc by using a phosphorus-containing carbon cathode. By changing the P content in the cathode from 0-1% mass the room temperature resistivity of the films can be changed from 10<sup>7</sup> Omega cm to 5 Omega cm. Electron energy-loss spectroscopy shows that incorporation of P does not change the amorphous tetrahedral nature of the carbon films deposited by the vacuum arc method. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | n-type doping of highly tetrahedral diamond-like amorphous carbon |
| Тип | lett |
| DOI | 10.1088/0953-8984/5/13/004 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 5 |
| Первая страница | L169 |
| Последняя страница | L174 |
| Аффилиация | V S Veerasamy; Dept. of Eng., Cambridge Univ., UK |
| Аффилиация | G A J Amaratunga; Dept. of Eng., Cambridge Univ., UK |
| Аффилиация | C A Davis; Dept. of Eng., Cambridge Univ., UK |
| Аффилиация | A E Timbs; Dept. of Eng., Cambridge Univ., UK |
| Аффилиация | W I Milne; Dept. of Eng., Cambridge Univ., UK |
| Аффилиация | D R McKenzie; Dept. of Eng., Cambridge Univ., UK |
| Выпуск | 13 |
