Epitaxial growth of cobalt films on Cu(100): a crystallographic LEED determination
J R Cerda; P L de Andres; A Cebollada; R Miranda; E Navas; P Schuster; C M Schneider; J Kirschner; J R Cerda; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; P L de Andres; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; A Cebollada; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; R Miranda; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; E Navas; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; P Schuster; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; C M Schneider; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain; J Kirschner; Inst. de Ciencia de Materiales, CSIC, Madrid, Spain
Журнал:
Journal of Physics: Condensed Matter
Дата:
1993-04-05
Аннотация:
Epitaxial thin films of cobalt ranging from 1 ML up to 10 ML have been grown on a Cu(100) substrate and characterized by LEED. The cobalt is found to grow, adopting a slight tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of a 5 ML Co film results in an almost perfect Cu(100) surface.
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