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Автор J M G J de Bakker
Автор F Pleiter
Автор P J M Smulders
Дата выпуска 1993-04-05
dc.description Perturbed angular correlation, Rutherford backscattering and channelling experiments were conducted to study the lattice location and annealing behaviour of 110 keV hafnium ions implanted into iron single crystals. It was found that a fraction of 11-25% of the implanted hafnium atoms are located at substitutional sites in an undisturbed environment, while about 50% are located at irregular lattice sites. The remaining fraction are located at or near regular lattice sites in a perturbed local environment. Trapping and detrapping of monovacancies by substitutional hafnium atoms at 200 and 250 K, respectively, as well as hafnium precipitation during annealing at 873 K was observed. The vacancy-hafnium binding energy was determined to be 0.17(3) eV.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Hafnium implanted in iron. I. Lattice location and annealing behaviour
Тип paper
DOI 10.1088/0953-8984/5/14/014
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 5
Первая страница 2171
Последняя страница 2180
Аффилиация J M G J de Bakker; Vakgroep Nucleaire Vaste Stof Fysica, Rijksuniv. Groningen, Netherlands
Аффилиация F Pleiter; Vakgroep Nucleaire Vaste Stof Fysica, Rijksuniv. Groningen, Netherlands
Аффилиация P J M Smulders; Vakgroep Nucleaire Vaste Stof Fysica, Rijksuniv. Groningen, Netherlands
Выпуск 14

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