| Автор | D R Mace |
| Автор | M P Grimshaw |
| Автор | D A Ritchie |
| Автор | C J B Ford |
| Автор | M Pepper |
| Автор | G A C Jones |
| Дата выпуска | 1993-04-19 |
| dc.description | Sub-micron split-gate structures have been fabricated on three pseudomorphic GaAs-In<sub>x</sub>Ga<sub>1-x</sub>As-AlGaAs quantum well structures, with indium fraction, x of 0.04, 0.10, and 0.14. The conductance characteristic of the device on the x=0.04 material showed clear plateaux due to the quantization of ballistic conduction in one dimension. Devices fabricated from the x=0.10 and x=0.14 material did not show plateaux, but exhibited a complex structure that varied quantitatively between nominally identical devices. This structure is thought to be due to both the random nature of the In<sub>x</sub>Ga<sub>1-x</sub>As alloy, and the roughness of the In<sub>x</sub>Ga<sub>1-x</sub>As interfaces. The spatial variation of the potential between the arms of the split gate due to these effects was probed by applying a differential voltage between the two gates. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electron conduction characteristics of split-gate structures fabricated on pseudomorphic GaAs-In<sub>x</sub>Ga<sub>1-x</sub>As-AlGaAs heterostructures |
| Тип | lett |
| DOI | 10.1088/0953-8984/5/16/002 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 5 |
| Первая страница | L227 |
| Последняя страница | L234 |
| Аффилиация | D R Mace; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | M P Grimshaw; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | D A Ritchie; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | C J B Ford; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | M Pepper; Cavendish Lab., Cambridge Univ., UK |
| Аффилиация | G A C Jones; Cavendish Lab., Cambridge Univ., UK |
| Выпуск | 16 |
