Electrostatic interaction effects on the nature of the K-Si interface bond
M Matos; M A Davidovich; E V Anda; M Matos; Dept. de Fisica, Pontificia Univ. Catolica do Rio de Janeiro, Brazil; M A Davidovich; Dept. de Fisica, Pontificia Univ. Catolica do Rio de Janeiro, Brazil; E V Anda; Dept. de Fisica, Pontificia Univ. Catolica do Rio de Janeiro, Brazil
Журнал:
Journal of Physics: Condensed Matter
Дата:
1993-08-16
Аннотация:
The authors comment on the nature of the K-Si interface bond.
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