| Автор | Ren-Zhi Wang |
| Автор | San-Huang Ke |
| Автор | Mei-Chun Huang |
| Дата выпуска | 1993-10-04 |
| dc.description | The hetero-interface of the common-anion superlattice (SL) (GaAs)<sub>3</sub>(AlAs)<sub>3</sub>(001) is on the As atomic plane, while that of the non-common-ion SL (AlAs)<sub>3</sub>(GeGe)<sub>3</sub>(001) is between the two atomic planes of As and Ge or of Ge and Al. In this paper, the self-consistent electronic structure calculation is reported for the two structures. The frozen-shape approach is used to determine the average bond energy and the valence band maximum in each molecular layer of the SL, and to investigate the relation between the interface structure and the internal electrical field. The results show that a large internal electric field exists in the non-common-ion SL but does not in the common-anion SL. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The interface charge transfer and internal electric fields in common-anion and non-common-ion superlattices |
| Тип | paper |
| DOI | 10.1088/0953-8984/5/40/009 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 5 |
| Первая страница | 7343 |
| Последняя страница | 7352 |
| Аффилиация | Ren-Zhi Wang; World Lab., China Center of Adv. Sci. & Technol., Beijing, China |
| Аффилиация | San-Huang Ke; World Lab., China Center of Adv. Sci. & Technol., Beijing, China |
| Аффилиация | Mei-Chun Huang; World Lab., China Center of Adv. Sci. & Technol., Beijing, China |
| Выпуск | 40 |
