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Автор C P Toh
Автор C K Ong
Дата выпуска 1993-02-01
dc.description The authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: a molecular statics study
Тип paper
DOI 10.1088/0953-8984/5/5/006
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 5
Первая страница 551
Последняя страница 558
Аффилиация C P Toh; Dept. of Phys., National Univ. of Singapore, Singapore
Аффилиация C K Ong; Dept. of Phys., National Univ. of Singapore, Singapore
Выпуск 5

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