| Автор | C P Toh |
| Автор | C K Ong |
| Дата выпуска | 1993-02-01 |
| dc.description | The authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: a molecular statics study |
| Тип | paper |
| DOI | 10.1088/0953-8984/5/5/006 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 5 |
| Первая страница | 551 |
| Последняя страница | 558 |
| Аффилиация | C P Toh; Dept. of Phys., National Univ. of Singapore, Singapore |
| Аффилиация | C K Ong; Dept. of Phys., National Univ. of Singapore, Singapore |
| Выпуск | 5 |
