| Автор | N Artunc |
| Автор | Z Z Ozturk |
| Дата выпуска | 1993-02-01 |
| dc.description | The resistivity of single-layered thin copper films with thickness of 17-124 nm, is studied as a function of the temperature and grain diameter. The resistivity of both as-deposited and 500 K annealed films is found to increase with decreasing film thickness. Analysis has shown that the grain-boundary scattering is the dominant contribution and the surface scattering cannot be the cause of the excess resistivity of both as-deposited and 500 K annealed films. The average reflection coefficient R of the electrons scattered by the grain boundaries is found to be 0.38 for both as-deposited and 500 K annealed films over the whole temperature and thickness range studied. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Influence of grain-boundary and surface scattering on the electrical resistivity of single-layered thin copper films |
| Тип | paper |
| DOI | 10.1088/0953-8984/5/5/007 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 5 |
| Первая страница | 559 |
| Последняя страница | 566 |
| Аффилиация | N Artunc; Dept. of Phys., Fac. of Sci., Ege Univ., Izmir, Turkey |
| Аффилиация | Z Z Ozturk; Dept. of Phys., Fac. of Sci., Ege Univ., Izmir, Turkey |
| Выпуск | 5 |
