Magnetothermopower in silicon MOSFETs
G Qin; T M Fromhold; P N Butcher; B G Mulimani; J P Oxley; B L Gallagher; G Qin; Dept. of Phys., Warwick Univ., Coventry, UK; T M Fromhold; Dept. of Phys., Warwick Univ., Coventry, UK; P N Butcher; Dept. of Phys., Warwick Univ., Coventry, UK; B G Mulimani; Dept. of Phys., Warwick Univ., Coventry, UK; J P Oxley; Dept. of Phys., Warwick Univ., Coventry, UK; B L Gallagher; Dept. of Phys., Warwick Univ., Coventry, UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1993-03-01
Аннотация:
The phonon drag and electronic diffusion contributions to the tensor M which determines the heat flux U=M.E is calculated for a two-dimensional electron gas in a perpendicular magnetic field B. The drag component is obtained using Boltzmann transport and diffusion is included using the lowest-order cumulant approximation to describe scattering between Landau states with different orbit centres. The 2D Landau levels have Gaussian model lineshapes with RMS width gamma =CB<sup>1/2</sup> which is the only adjustable parameter. At temperature T=5.02 K, drag dominates the predicted M<sub>yx</sub>(B) values which are in good agreement with new data for Si MOSFETs taking C=0.6 meV T<sup>-1</sup>2/. The calculated M<sub>xx</sub> values are in worse accord with the data because the predicted drag contribution M<sub>xx</sub><sup>g</sup> is zero. Both M<sub>xx</sub> and M<sub>yx</sub> reveal magneto-oscillations originating from fluctuations in the density of states at the Fermi level. The authors show that at T=5.02 K, setting M<sub>xx</sub><sup>g</sup>=0 has little effect on the accuracy of the magnetothermopower S<sub>xx</sub>(B) but yields poor approximations to the off-diagonal term S<sub>yx</sub>(B). At T=1.47 K, these thermopower components are diffusion-dominated. The predicted values are comparable to experiment although the magneto-oscillations are overemphasized in S<sub>yx</sub> and underestimated in S<sub>xx</sub>.
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