A new mechanism for high-frequency rectification in a ballistic quantum point contact
T J B M Janssen; J C Maan; J Singleton; N K Patel; M Pepper; J E F Frost; D A Ritchie; G A C Jones; T J B M Janssen; High Field Magnet Lab., Nijmegen Univ., Netherlands; J C Maan; High Field Magnet Lab., Nijmegen Univ., Netherlands; J Singleton; High Field Magnet Lab., Nijmegen Univ., Netherlands; N K Patel; High Field Magnet Lab., Nijmegen Univ., Netherlands; M Pepper; High Field Magnet Lab., Nijmegen Univ., Netherlands; J E F Frost; High Field Magnet Lab., Nijmegen Univ., Netherlands; D A Ritchie; High Field Magnet Lab., Nijmegen Univ., Netherlands; G A C Jones; High Field Magnet Lab., Nijmegen Univ., Netherlands
Журнал:
Journal of Physics: Condensed Matter
Дата:
1994-03-28
Аннотация:
A large DC voltage response, which depends strongly on the number of occupied subbands, is observed when a quantum point contact is subjected to high-frequency ( approximately THz) radiation. This signal is explained by rectification caused by the non-linear one-dimensional transport properties of the point contact.
299.5Кб