| Автор | A I Yakimov |
| Автор | V A Markov |
| Автор | A V Dvurechenskii |
| Автор | O P Pchelyakov |
| Дата выпуска | 1994-03-28 |
| dc.description | The conductance of the Si/p<sup>+</sup>-Ge/Si epitaxial heterostructure associated with hole tunnelling into isolated ultrasmall ( approximately 10 nm) quantum dots p<sup>+</sup>-Ge has been studied. Quantum dots have been obtained after islanding of 1.3 nm Ge film during MBE growth by the Stransky-Krastanov mode method. Conductance oscillations as a function of bias voltage were observed. The experimental data are analysed in terms of a model that involves the interplay of single-electron charging effects and resonant tunnelling through individual energy levels. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Conductance oscillations in Ge/Si heterostructures containing quantum dots |
| Тип | paper |
| DOI | 10.1088/0953-8984/6/13/015 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | 2573 |
| Последняя страница | 2582 |
| Аффилиация | A I Yakimov; Inst. of Semicond. Phys., Novosibirsk, Russia |
| Аффилиация | V A Markov; Inst. of Semicond. Phys., Novosibirsk, Russia |
| Аффилиация | A V Dvurechenskii; Inst. of Semicond. Phys., Novosibirsk, Russia |
| Аффилиация | O P Pchelyakov; Inst. of Semicond. Phys., Novosibirsk, Russia |
| Выпуск | 13 |
