| Автор | Zhao-Hua Cheng |
| Автор | Bao-Gen Shen |
| Автор | Jun-Xian Zhang |
| Автор | Hua-Yang Gong |
| Автор | Jian-Gao Zhao |
| Дата выпуска | 1994-04-04 |
| dc.description | The structural and magnetic properties of compounds in the series Sm<sub>2</sub>Fe<sub>15</sub>Al<sub>2</sub>C<sub>x</sub> have been investigated by means of x-ray diffraction (XRD) and magnetization measurements. Samples with x=0, 0.5, 1.0, 1.5, and 2.0 were prepared by the arc-melting method. XRD patterns indicate that these carbides are single phase with a rhombohedral Th<sub>2</sub>Zn<sub>17</sub>-type structure, except for Sm<sub>2</sub>Fe<sub>15</sub>Al<sub>2</sub>, which contains a few per cent of BCC alpha -Fe. The saturation magnetization for all samples is about 110 emu g<sup>-1</sup> and has a small dependence on C concentration. The Curie temperature T<sub>c</sub> enhancement is about 190 K for x=1.5 compared with that of Sm<sub>2</sub>Fe<sub>17</sub>. All compounds exhibit an easy c-axis anisotropy at room temperature and the anisotropy field increases to about 110 kOe when x<or=1.5. The substitution of Al, like Ga and Si, is found to not only help the formation of high-C-concentration rare-earth-Fe compounds with 2:17-type structure, but also increase the anisotropy field. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The formation and magnetic properties of Sm<sub>2</sub>Fe<sub>15</sub>Al<sub>2</sub>C<sub>x</sub> (x=0-2.0) compounds prepared by arc melting |
| Тип | lett |
| DOI | 10.1088/0953-8984/6/14/001 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | L185 |
| Последняя страница | L190 |
| Аффилиация | Zhao-Hua Cheng; Chinese Acad. of Si, Beijing, China |
| Аффилиация | Bao-Gen Shen; Chinese Acad. of Si, Beijing, China |
| Аффилиация | Jun-Xian Zhang; Chinese Acad. of Si, Beijing, China |
| Аффилиация | Hua-Yang Gong; Chinese Acad. of Si, Beijing, China |
| Аффилиация | Jian-Gao Zhao; Chinese Acad. of Si, Beijing, China |
| Выпуск | 14 |
