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Автор G M Gusev
Автор U Gennser
Автор D K Maude
Автор J C Portal
Автор D I Lubyshev
Автор Yu V Nastaushev
Автор J C Rossi
Автор P Basmaji
Дата выпуска 1994-05-02
dc.description The magnetoresistance of mesoscopic GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As samples containing differently ordered antidot lattices with the same long-range periodicity of 0.3 mu m has been studied. In a periodic lattice, magnetic-field-induced two-level switching of several impurities has been observed. In contrast, in a disordered antidot lattice single-impurity switching dominates as the overlapping of the depletion regions around the antidots allows for only a few conducting channels through the sample. The impurity dwell time of one such level is seen to undergo large variations when sweeping an external magnetic field. It has been possible to observe the influence of other defects in the sample on the dominating impurity level, since fluctuations of the local electron density affect the Aharanov-Bohm oscillations, and therefore also the impurity double-well potential.
Формат application.pdf
Издатель Institute of Physics Publishing
Название The magnetic-field-tuned impurity level in a mesoscopic Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs antidot sample
Тип lett
DOI 10.1088/0953-8984/6/18/002
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 6
Первая страница L265
Последняя страница L272
Аффилиация G M Gusev; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация U Gennser; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация D K Maude; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация J C Portal; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация D I Lubyshev; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация Yu V Nastaushev; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация J C Rossi; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Аффилиация P Basmaji; Inst. de Fisica e Quimica de Sao Carlos, Sao Paulo Univ., Brazil
Выпуск 18

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