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Автор J Zi
Автор W Ludwig
Дата выпуска 1994-05-02
dc.description We study the phonon spectra of VI/III-V heterovalent superlattices (Si/GaAs, Si/AlAs, Ge/GaAs and Ge/AlAs) grown pseudomorphically on a (001)-oriented Ge or GaAs substrate by means of a planar force-constant model. Three possible interface configurations are considered, i.e. That the two interfaces in a period are composed of (i) two IV-III, (ii) two IV-V and (iii) IV-III and VI-V interfaces. It was found that confined modes could be well described by the bulk dispersions provided that the penetration parameter delta , which describes the penetration of a confined mode spreading into the second material, is properly chosen. In Ge/AlAs superlattices we find interface modes whose frequencies are slightly higher than that of the AlAs LO phonon at the Gamma point. Their vibrational amplitudes attenuate rapidly from the Ge-Al interface into the interior of Ge layers, but slowly into the interior of AlAs layers.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Phonons in VI/III-V heterovalent superlattices
Тип paper
DOI 10.1088/0953-8984/6/18/005
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 6
Первая страница 3291
Последняя страница 3300
Аффилиация J Zi; Inst. fur Theor. Phys. II, Westfalischen Wilhelms-Univ., Munster, Germany
Аффилиация W Ludwig; Inst. fur Theor. Phys. II, Westfalischen Wilhelms-Univ., Munster, Germany
Выпуск 18

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