Bond lengths around isovalent impurities and in semiconductor solid solutions
San-Guo Shen; San-Guo Shen; China Center of Adv. Sci. & Technol., Beijing, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1994-06-13
Аннотация:
Using a bond orbital model, we calculate the bond length and polarity of semiconductors, the symmetric relaxations around isovalent impurities in semiconductor-impurity systems, and the bond-length variations in solid solutions A<sub>1-x</sub>B<sub>x</sub>C of semiconductor alloys. We find that small impurities have a large relaxation, but the variations in bond energy are smaller than those of large impurities. The results are compared with other theoretical and experimental results and are found to be in excellent agreement with experiments.
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