| Автор | X T Meng |
| Автор | W Puff |
| Дата выпуска | 1994-06-27 |
| dc.description | Single crystals of silicon grown in an argon atmosphere were irradiated with three different neutron doses; 6*10<sup>16</sup>, 3.6*10<sup>17</sup> and 1.2*10<sup>18</sup> cm<sup>-2</sup>. Positron annihilation spectroscopy indicates that there are two distinct annealing stages of V-type defects in the three neutron-irradiated silicon samples: one at about 200 degrees C and another at about 500 degrees C. The former is due to the annealing out of P-V and (V<sub>2</sub>-O)<sup>-</sup> complexes; the latter is due to the annealing out of (V<sub>2</sub>-O)<sup>0</sup> complexes. For samples irradiated with two different higher neutron doses, the intensity due to the radiation-induced monovacancy-type defects is above 58% and disappears at 550 degrees C; the intensity due to the radiation-induced divacancies is above 23%, increases above 200 degrees C and disappears at 600-650 degrees C. For the sample irradiated with a lower neutron dose the intensity due to the divacancies is only 7.3%, it disappears below 200 degrees C, and no secondary divacancies appear. The intensity due to the secondary divacancies is highly dependent on the neutron dose. There are two annealing stages of V<sub>2</sub>-type defects at 150-200 degrees C and about 600 degrees C. The former is due to the approach of interstitial silicon atoms to divacancies localized in the cores of neutron-radiation-disordered regions, and the latter is due to annealing out of divacancies in the 'undisturbed' matrix of the silicon crystal and V<sub>3</sub>-O complexes. For samples irradiated with two different higher neutron doses, monovacancy-type defects with higher intensities appear again at 600-650 degrees C, which indicates the nature of the '600-650 degrees C acceptor'. Above 700 degrees C, many dislocations with 231 ps<or= tau <or=239 ps (sometimes both dislocations and monovacancy-type defects (240 ps<or= tau <or=266 ps)), are formed, especially for samples irradiated with higher neutron doses. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Positron annihilation study of silicon irradiated by different neutron doses |
| Тип | paper |
| DOI | 10.1088/0953-8984/6/26/019 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | 4971 |
| Последняя страница | 4980 |
| Аффилиация | X T Meng; Inst. of Nucl. Energy Technol., Tsinghua Univ., Beijing, China |
| Аффилиация | W Puff; Inst. of Nucl. Energy Technol., Tsinghua Univ., Beijing, China |
| Выпуск | 26 |
