| Автор | Y Shi |
| Автор | F M Wu |
| Автор | Y D Zheng |
| Автор | M Suezawa |
| Автор | M Imai |
| Автор | K Sumino |
| Дата выпуска | 1994-10-10 |
| dc.description | The optically active process of higher-order bands (HOBs) in fast-neutron-irradiated float-zone silicon has been investigated at low temperature using a Fourier-transform infrared spectrometer with optical excitation. It is found that the photoexcitation process follows an exponential time dependence and that the decay is logarithmic with a decay time constant of 10<sup>5</sup> s at 7 K. The saturation value of the absorption coefficients depends on the logarithm of the illumination-light intensity. These characteristics are associated with the slow relaxation of photoexcited carriers originating mainly from defect clusters. The relaxation behaviour of photoexcited carriers has been analysed using the macroscopic-barrier model, which is in good agreement with the observations. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The optically active process of higher-order bands in neutron-irradiated silicon |
| Тип | paper |
| DOI | 10.1088/0953-8984/6/41/026 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | 8645 |
| Последняя страница | 8653 |
| Аффилиация | Y Shi; Dept. of Phys., Nanjing Univ., China |
| Аффилиация | F M Wu; Dept. of Phys., Nanjing Univ., China |
| Аффилиация | Y D Zheng; Dept. of Phys., Nanjing Univ., China |
| Аффилиация | M Suezawa; Dept. of Phys., Nanjing Univ., China |
| Аффилиация | M Imai; Dept. of Phys., Nanjing Univ., China |
| Аффилиация | K Sumino; Dept. of Phys., Nanjing Univ., China |
| Выпуск | 41 |
