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Автор M L Leadbeater
Автор L C Foden
Автор T M Burke
Автор J H Burroughes
Автор M P Grimshaw
Автор D A Ritchie
Автор L L Wang
Автор M Pepper
Дата выпуска 1995-06-19
dc.description We have used MBE regrowth technology to produce a non-planar 2DEG at a GaAs/AlGaAs heterojunction grown over an etched facet. By applying a uniform magnetic field to this structure we obtain a spatially varying field component normal to the 2DEG. When the magnetic field is applied in the plane of the substrate, the resistance measured from one side of the facet to the other is found to be quantized at approximately the quantum Hall plateaux. Rotating the plane of the sample with respect to the magnetic field allows us to investigate edge state propagation and reflection in the different regions of the sample. By making the appropriate four-terminal resistance measurement we can directly determine the filling factor on the facet. In particular we study the novel situation where the transverse field component changes sign on the facet and the cyclotron orbits rotate in the opposite sense to those on the planar region.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Electron transport in a non-uniform magnetic field
Тип lett
DOI 10.1088/0953-8984/7/25/001
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 7
Первая страница L307
Последняя страница L315
Аффилиация M L Leadbeater; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация L C Foden; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация T M Burke; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация J H Burroughes; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация M P Grimshaw; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация D A Ritchie; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация L L Wang; Toshiba Cambridge Res. Centre Ltd., UK
Аффилиация M Pepper; Toshiba Cambridge Res. Centre Ltd., UK
Выпуск 25

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