Temperature-dependent width of current tristability for resonant tunnelling through a double-barrier structure
D J Fisher; Chao Zhang; D J Fisher; Dept. of Phys., Wollongong Univ., NSW, Australia; Chao Zhang; Dept. of Phys., Wollongong Univ., NSW, Australia
Журнал:
Journal of Physics: Condensed Matter
Дата:
1995-06-26
Аннотация:
When electrons tunnel through a double-barrier structure, there exists a region of bistability (or tristability) in the current-voltage characteristics due to the dynamical charge feedback effect in the resonant well. We propose a mechanism of acoustic-phonon-assisted tunnelling to explain the experimentally observed non-monotonic behaviour of the width of the tristable region. It is found that this width has a single maximum as experimentally observed. Furthermore, contrary to the previous proposal, our result shows that electron thermal activation is not the dominant mechanism in controlling this temperature-dependent width.
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