The electronic structure of ZrSe<sub>2</sub> and Cs<sub>x</sub>ZrSe<sub>2</sub> studied by angle-resolved photoelectron spectroscopy
H E Brauer; H I Starnberg; L J Holleboom; H P Hughes; H E Brauer; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden; H I Starnberg; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden; L J Holleboom; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden; H P Hughes; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
Журнал:
Journal of Physics: Condensed Matter
Дата:
1995-10-02
Аннотация:
We report an angle-resolved photoelectron spectroscopy study of the layered semiconductor ZrSe<sub>2</sub>, and of changes in its electronic structure induced by in situ intercalation with Cs. The results show that the valence band structure of ZrSe<sub>2</sub> is initially of 3D character, but is transformed to become essentially 2D upon Cs intercalation. The observed changes are supported by self-consistent LAPW band calculations, and are not compatible with the rigid-band model. Changes in the Se 3d core level lineshape are attributed to an intercalation-induced increase in the carrier density in the lowest conduction band, which produces a different screening of the core hole.
965.1Кб