| Автор | L Liszkay |
| Автор | C Corbel |
| Автор | L Baroux |
| Автор | P Hautojarvi |
| Автор | A Declemy |
| Автор | P O Renault |
| Дата выпуска | 1995-11-06 |
| dc.description | Slow-positron-beam studies on aluminium-implanted mercury cadmium telluride are presented. Single crystals were implanted with 320 keV Al ions up to 3*10<sup>12</sup> fluence at room temperature and 1*10<sup>14</sup> ions cm<sup>-2</sup> fluence at 100 K and 300 K. We discuss the effect of the native oxide layer on the positron spectra and show that the oxide-crystal interface acts as a strong positron trap. By using both the core (W) and the valence (S) annihilation fractions we can separate oxide-related positron effects at the surface from the damage in the crystal. Implantation introduces small vacancy clusters. On the basis of the relative Doppler parameters of the defects created (S<sub>d</sub>/S<sub>b</sub>=1.05, W<sub>d</sub>/W<sub>b</sub>=0 80), they are most probably divacancies. The divacancy profile is found to extend from the surface to a depth comparable to the mean Al implantation depth. At room temperature divacancy creation reaches saturation at 3*10<sup>12</sup> ions cm<sup>-2</sup> fluence with an estimated divacancy concentration of 4*10<sup>16</sup> cm<sup>-3</sup>. After implantation at low temperature (100 K) and annealing at 360 K the divacancy creation exceeds 10<sup>18</sup> cm<sup>-3</sup>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Implantation-induced defects in Hg<sub>0.78</sub>Cd<sub>0.22</sub>Te studied using slow positrons |
| Тип | paper |
| DOI | 10.1088/0953-8984/7/45/008 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 7 |
| Первая страница | 8529 |
| Последняя страница | 8538 |
| Аффилиация | L Liszkay; INSTN-UEPEM CE Saclay, Gif-sur-Yvette, France |
| Аффилиация | C Corbel; INSTN-UEPEM CE Saclay, Gif-sur-Yvette, France |
| Аффилиация | L Baroux; INSTN-UEPEM CE Saclay, Gif-sur-Yvette, France |
| Аффилиация | P Hautojarvi; INSTN-UEPEM CE Saclay, Gif-sur-Yvette, France |
| Аффилиация | A Declemy; INSTN-UEPEM CE Saclay, Gif-sur-Yvette, France |
| Аффилиация | P O Renault; INSTN-UEPEM CE Saclay, Gif-sur-Yvette, France |
| Выпуск | 45 |
