Samples with low-energy C₆₀ ions implanted into porous silicon were fabricated with the ionized cluster beam deposition approach for improving the light emission of C₆₀. Depth analysis by secondary-ion mass spectroscopy showed that C₆₀ had been incorporated into porous silicon. The photoluminescence spectrum measured under excitation by an Ar⁺ laser (514.4 nm) at room temperature showed a large number of intense and well resolved fine-structure peaks. These features indicated the strong coupling of vibrational progressions with the electron states of C₆₀, induced by the interaction between the C₆₀ molecule and the nanometre-sized silicon particles.