The temperature dependence of resistivity and thermoelectric power in lanthanum molybdenum oxide crystal
Tian Mingliang; Mao Zhiqiang; Zhang Yuheng; Tian Mingliang; Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, Anhui, People's Republic of China, and Centre for Advanced Studies in Science and Technology of Microstructures (CASSTM), Nanjing 210093, People's Republic of China; Mao Zhiqiang; Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, Anhui, People's Republic of China, and Centre for Advanced Studies in Science and Technology of Microstructures (CASSTM), Nanjing 210093, People's Republic of China; Zhang Yuheng; Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, Anhui, People's Republic of China, and Centre for Advanced Studies in Science and Technology of Microstructures (CASSTM), Nanjing 210093, People's Republic of China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1996-05-06
Аннотация:
Electrical resistivity, voltage - current (V - I) characteristics and thermoelectric power (TEP) at various temperatures in the quasi-two-dimensional single crystal were measured. It was found that at 130 K the resistivity shows a metal - semiconductor transition, and the TEP has a minimum value. In the semiconducting states below 130 K, the electronic transport presents a clear non-linear behaviour. By analysis of the above data, it is indicated that above 130 K the crystal is a metal and electrons are dominant carriers; below 130 K the crystal becomes a semiconductor with a small energy gap, the two types of carrier being possibly co-existent. The anomalies of TEP and resistivity near 130 K may be associated with the formation of so-called charge-density waves due to the partial opening of a gap.
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