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Автор Xiaohan Liu
Автор Daming Huang
Автор Zuimin Jiang
Автор Xuekun Lu
Автор Xiangjiu Zhang
Автор Xun Wang
Дата выпуска 1996-05-20
dc.description Photoluminescence spectra from quantum well structures grown at high temperatures are investigated. The luminescence properties are found to be very different from those of free excitons. To describe correctly the spectral lineshape, the radiative recombination from excitons trapped on the local potential fluctuations in quantum wells must be considered. At low sample temperatures, the luminescence is mainly from the trapped excitons. With increasing temperature, trapped excitons are thermally activated into free excitons and luminescence peaks shift to higher energies. By comparing measured spectra with the calculated spectra, the trap density and the trap energy are derived. The origin of the trap and its relation with the crystal growth are discussed.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Photoluminescence from trapped excitons in quantum well structures
Тип paper
DOI 10.1088/0953-8984/8/21/019
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 8
Первая страница 3947
Последняя страница 3954
Аффилиация Xiaohan Liu; Surface Physics Laboratory and Fudan T D Lee Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Аффилиация Daming Huang; Surface Physics Laboratory and Fudan T D Lee Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Аффилиация Zuimin Jiang; Surface Physics Laboratory and Fudan T D Lee Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Аффилиация Xuekun Lu; Surface Physics Laboratory and Fudan T D Lee Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Аффилиация Xiangjiu Zhang; Surface Physics Laboratory and Fudan T D Lee Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Аффилиация Xun Wang; Surface Physics Laboratory and Fudan T D Lee Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
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