| Автор | H Eduardo Roman |
| Автор | Lorenzo Pavesi |
| Дата выпуска | 1996-07-08 |
| dc.description | A simple lattice model describing the recombination dynamics in visible-light-emitting porous silicon is presented. In the model, each occupied lattice site represents a Si crystal of nanometre size. The disordered structure of porous silicon is modelled by modified random percolation networks in two and three dimensions. Both correlated (excitons) and uncorrelated electron - hole pairs have been studied. Radiative and non-radiative processes as well as hopping between nearest-neighbour occupied sites are taken into account. By means of extensive Monte Carlo simulations, we show that the recombination dynamics in porous silicon is due to a dispersive diffusion of excitons in a disordered arrangement of interconnected Si quantum dots. The simulated luminescence decay for the excitons shows a stretched exponential lineshape while for uncorrelated electron - hole pairs a power-law decay is suggested. Our results successfully account for the recombination dynamics recently observed in experiments. The present model is a prototype for a larger class of models describing diffusion of particles in a complex disordered system. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Monte Carlo simulations of the recombination dynamics in porous silicon |
| Тип | paper |
| DOI | 10.1088/0953-8984/8/28/003 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 8 |
| Первая страница | 5161 |
| Последняя страница | 5187 |
| Выпуск | 28 |
