Segregation-controlled kinetics of fast impurity diffusion in polycrystalline solids
N A Stolwijk; Ch Poisson; J Bernardini
Журнал:
Journal of Physics: Condensed Matter
Дата:
1996-08-05
Аннотация:
Commonly, the presence of grain boundaries in crystalline solids leads to enhanced atomic transport because atoms can move faster along such two-dimensional lattice defects than through the lattice itself. Recent experiments on gold diffusion into silicon, however, showed for the first time a retardation of the metallic impurity incorporation in polycrystalline material compared to that of monocrystals of the same host. The present paper provides a new model that accounts for the experimental findings with regard to Si:Au. In addition, it may apply to other systems in which a high mobility of the impurity in the lattice goes along with extremely strong segregation effects.
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