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Автор H T Anyele
Автор C C Matthai
Дата выпуска 1996-09-02
dc.description A self-consistent tight-binding technique has been employed to calculate the electronic structures of the Sb - and Sn - Si surfaces. For the Sn reconstructed surface, two filled and one unfilled surface states as well as one straddling the Fermi level were calculated. Three filled and two unfilled surface states were calculated for the Sb reconstructed surface. These surface state positions are in good agreement with experiments. We have also calculated the imaginary part of the surface dielectric function, , the surface dielectric function anisotropy and the corresponding reflectance anisotropy spectra for these reconstructed surfaces. For comparison we have also calculated the difference between the imaginary parts of the surface dielectric functions for the Sn - Si and Si surfaces.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Calculation of the electronic structure and the linear optical response of the Sb - and surfaces
Тип paper
DOI 10.1088/0953-8984/8/36/011
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 8
Первая страница 6585
Последняя страница 6596
Выпуск 36

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